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Product Description
Stanford Microdevices NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 5 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products.
Preliminary Preliminary
NGA-689
DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier
Small Signal Gain vs. Frequency
16 14
dB
12 10 8 6 0 2 4
Frequency GHz
Product Features 11.7dB Gain, 18.9 dBm P1dB at 1950Mhz Cascadable 50 ohm: 1.4:1 VSWR Patented GaAs HBT Technology Operates from Single Supply Low Thermal Resistance Package Unconditionally Stable Applications Cellular, PCS, CDPD Wireless Data, SONET
U nits Min. Ty p. 19.9 18.9 17.9 36.9 33.6 32.1 11.9 11.7 11.6 5000 1.4:1 1.4:1 19.7 19.5 19.4 6.0 5.8 91 Max.
6
8
Sy mbol
Parameters: Test C onditions: Z0 = 50 Ohms, ID = 80 mA, T = 25C Output Power at 1dB C ompressi on f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz
P 1dB
dB m dB m dB m dB m dB m dB m dB dB dB MHz
IP3
Thi rd Order Intercept Poi nt Power out per tone = 0 dBm
S 21 Bandwi dth S11 S 22 S 12 NF VD Rth, j-l
Small Si gnal Gai n D etermi ned by S11 and S22 values Input VSWR Output VSWR Reverse Isolati on Noi se Fi gure D evi ce Voltage Thermal Resi stance (juncti on - lead)
f = D C - 5000 MHz f = D C - 5000 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 2000 MHz
dB dB dB dB V C /W
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101442 Rev A
1
Preliminary Preliminary NGA-689 DC-5.0 GHz 5.8V GaAs HBT Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l
Parameter Supply Current Device Voltage Operating Temperature Maximum Input Pow er Storage Temperature Range Operating Junction Temperature Value 120 6.7 -40 to +85 +13 -40 to +150 +150 Unit mA V C dBm C C
Key parameters, at typical operating frequencies:
Parameter 500 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on 850 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on 1950 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on 2400 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on Ty pical 25C 12.0 37.2 19.9 19.6 19.7 11.9 36.9 19.9 18.5 19.7 11.7 33.6 18.9 16.0 19.5 11.6 32.1 17.9 15.9 19.4 Test C ondition U nit dB dB m dB m dB dB dB dB m dB m dB dB dB dB m dB m dB dB dB dB m dB m dB dB (ID = 80mA, unless otherwise noted)
Tone spaci ng = 1 MHz, Pout per tone = 0dBm
Tone spaci ng = 1 MHz, Pout per tone = 0dBm
Tone spaci ng = 1 MHz, Pout per tone = 0dBm
Tone spaci ng = 1 MHz, Pout per tone = 0dBm
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101442 Rev A
Preliminary Preliminary NGA-689 DC-5.0 GHz 5.8V GaAs HBT
Pin # 1 Function D escription RF IN RF i nput pi n. Thi s pi n requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. GND C onnecti on to ground. For best performance use vi a holes (as close to ground leads as possi ble) to reduce lead i nductance. RF OUT/ RF output and bi as pi n. Bi as should be BIAS suppli ed to thi s pi n through an external seri es resi stor and RF choke i nductor. Because D C bi asi ng i s present on thi s pi n, a D C blocki ng capaci tor should be used i n most appli cati ons (see appli cati on schemati c). The supply si de of the bi as network should be well bypassed. GND Same as Pi n 2. D ev ice Schematic
2
3
4
Application Schematic
R ecommended B ias R esistor Values Supply Voltage(Vs) Rbi as (Ohms) 8V 27 9V 39 12V 75
Cd1
Cd2
R bias Vs
For 8V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended.
Lchoke
50 ohm microstrip
2 1 Cb1 3 4 Cb2
50 ohm microstrip
R eference D esignator C b1 C b2 C d1 C d2 Lchoke
Function D C Blocki ng D C Blocki ng D ecoupli ng D ecoupli ng AC Blocki ng
500 MH z 220 pF 220 pF 1 uF 100 pF 68 nH
850 MH z 100 pF 100 pF 1 uF 68 pF 33 nH
1950 MH z 68 pF 68 pF 1 uF 22 pF 22 nH
2400 MH z 56 pF 56 pF 1 uF 22 pF 18 nH
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
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http://www.stanfordmicro.com
EDS-101442 Rev A
Preliminary Preliminary NGA-689 DC-5.0 GHz 5.8V GaAs HBT
14 12 10 8 6 4 2 0 0
S21, ID = 80mA, T = 25C
0 -5
dB
S12, ID = 80mA, T = 25C
dB
-10 -15 -20 -25
`
2
4 GHz
6
8
0
2
4
GHz
6
8
0 -5
dB
S11, ID = 80mA, T = 25C
0 -5
dB
S22, ID = 80mA, T = 25C
-10 -15 -20 -25 0 2 4
GHz
-10 -15 -20 -25
6
8
0
2
4
GHz
6
8
Noise Figure
Typical Bias Conditions, T = 25C
7.0 6.5
dB
120 100
Id (mA)
6.0 5.5 5.0 4.5 0.5 0.7 0.9 1.1 1.3 GHz 1.5 1.7 1.9
80 60 40 20 0 0 2 4 6 Device Voltage (V) 8
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com
EDS-101442 Rev A
Preliminary Preliminary NGA-689 DC-5.0 GHz 5.8V GaAs HBT
S21 vs. Bias, T = 25C IP3 vs. Bias, T = 25C
13.0 12.5
dB
60mA
45 40 35 30
60mA
80mA 100mA
12.0
dB
11.5 11.0 10.5 0.5 1.5
GHz
25 20
2.5 3.5
80mA 100mA
0.5
1.5
GHz
2.5
3.5
P1dB vs. Bias, T = 25C
25 20
dBm dB
13.0 12.5 12.0 11.5
60mA 80mA 100mA
S21 vs. Temperature, ID = 80mA
15 10 5 0 0.5 1.5
GHz
25C
11.0 10.5
2.5 3.5
-40C 85C
0.5
1.0
1.5
2.0 GHz
2.5
3.0
3.5
45 40
dBm
IP3 vs. Temperature, ID = 80mA
25 20
dBm
P1dB vs. Temperature, ID = 80mA
35 30
25C
15 10 5 0
25C -40C 85C
25 20 0.5
-40C 85C
1.0
1.5
2.0
GHz
2.5
3.0
3.5
0.5
1.0
1.5
2.0
GHz
2.5
3.0
3.5
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
5
http://www.stanfordmicro.com
EDS-101442 Rev A
Preliminary Preliminary NGA-689 DC-5.0 GHz 5.8V GaAs HBT Typical S-Parameters, ID = 80mA ( No external matching, de-embedded to device leads)
S11 Freq GH z 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.20 2.40 2.60 2.80 3.00 3.20 3.40 3.60 3.80 4.00 4.20 4.40 4.60 4.80 5.00 5.20 5.40 5.60 5.80 6.00 6.50 7.00 7.50 7.90 mag 0.089 0.090 0.093 0.097 0.101 0.105 0.109 0.114 0.117 0.120 0.124 0.128 0.131 0.135 0.140 0.144 0.148 0.152 0.156 0.158 0.159 0.161 0.160 0.158 0.155 0.151 0.146 0.140 0.133 0.126 0.120 0.113 0.107 0.101 0.095 0.089 0.084 0.078 0.071 0.064 0.059 0.075 0.138 0.220 0.276 An g 2 1 -1 -4 -7 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -29 -31 -32 -34 -36 -38 -43 -47 -53 -57 -60 -63 -66 -69 -71 -74 -76 -78 -80 -82 -83 -84 -84 -81 -75 -65 -26 -11 -11 -15 dB 12.1 12.1 12.0 12.0 12.0 12.0 12.0 12.0 11.9 11.9 11.9 11.9 11.9 11.9 11.9 11.9 11.9 11.9 11.9 11.8 11.8 11.8 11.8 11.8 11.7 11.7 11.7 11.6 11.6 11.6 11.5 11.5 11.4 11.4 11.3 11.3 11.2 11.1 11.1 11.0 10.9 10.5 9.9 9.1 8.5 S 21 mag 4.014 4.009 3.997 3.985 3.976 3.968 3.964 3.959 3.955 3.950 3.948 3.944 3.940 3.936 3.931 3.928 3.923 3.920 3.916 3.911 3.907 3.898 3.889 3.878 3.866 3.854 3.838 3.823 3.805 3.785 3.766 3.745 3.723 3.702 3.679 3.655 3.630 3.602 3.574 3.538 3.496 3.349 3.138 2.863 2.672 An g 175 174 173 170 168 165 162 159 156 153 150 147 144 141 138 135 132 129 126 123 120 113 107 101 95 89 83 76 70 64 58 51 45 38 32 26 19 13 6 -1 -7 -25 -42 -59 -70 dB -19.7 -19.7 -19.7 -19.7 -19.7 -19.7 -19.7 -19.7 -19.7 -19.7 -19.7 -19.7 -19.7 -19.6 -19.6 -19.6 -19.6 -19.6 -19.6 -19.5 -19.5 -19.5 -19.4 -19.4 -19.3 -19.3 -19.2 -19.2 -19.1 -19.0 -19.0 -18.9 -18.9 -18.8 -18.7 -18.6 -18.5 -18.5 -18.4 -18.3 -18.3 -18.3 -18.4 -18.8 -19.1 S 12 mag 0.103 0.103 0.104 0.104 0.104 0.104 0.104 0.104 0.104 0.104 0.104 0.104 0.104 0.104 0.104 0.104 0.105 0.105 0.105 0.105 0.106 0.106 0.107 0.107 0.108 0.109 0.109 0.110 0.111 0.112 0.112 0.113 0.114 0.115 0.116 0.117 0.118 0.119 0.120 0.121 0.122 0.122 0.120 0.115 0.110 An g 0 0 -2 -3 -4 -6 -7 -8 -9 -10 -11 -12 -13 -14 -16 -17 -18 -19 -20 -21 -22 -25 -27 -30 -32 -35 -37 -40 -43 -45 -48 -51 -54 -57 -60 -63 -67 -70 -74 -77 -81 -91 -102 -112 -119 mag 0.124 0.121 0.116 0.111 0.106 0.101 0.099 0.098 0.099 0.100 0.100 0.102 0.103 0.104 0.105 0.106 0.106 0.107 0.108 0.110 0.111 0.116 0.123 0.133 0.143 0.156 0.170 0.186 0.204 0.222 0.240 0.258 0.276 0.292 0.308 0.323 0.337 0.351 0.365 0.382 0.399 0.455 0.521 0.583 0.621 S 22 An g -180 -179 -178 -177 -175 -173 -171 -168 -167 -165 -164 -163 -162 -161 -161 -161 -161 -161 -162 -164 -166 -172 -179 174 167 160 154 147 142 136 131 126 121 116 111 106 101 95 89 82 76 58 41 25 16
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
6
http://www.stanfordmicro.com
EDS-101442 Rev A
Preliminary Preliminary NGA-689 DC-5.0 GHz 5.8V GaAs HBT
Caution: ESD sensitive Part Number Ordering Information
Part N umber NGA-689 R eel Siz e 7" D ev ices/R eel 1000
Appropriate precautions in handling, packaging and testing devices must be observed.
Part Symbolization The part will be symbolized with a N6 designator on the top surface of the package.
Package Dimensions
Pin # 1 2 3 4
Functi on RFi n Gnd RFout/Vcc Gnd
1
N6
2
4
3
PCB Pad Layout
DIMENSIONS ARE IN INCHES [MM]
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
7
http://www.stanfordmicro.com
EDS-101442 Rev A
Preliminary Preliminary NGA-689 DC-5.0 GHz 5.8V GaAs HBT
Component Tape and Reel Packaging
Tape Dimensions For 89 Outline
C avi ty
D escription Length Wi dth D epth Pi tch Bottom Hole D i ameter D i ameter Pi tch Posi ti on Wi dth Tape Thi ckness Wi dth Thi ckness C avi ty to Perforati on (Wi dth D i recti on) C avi ty to Perforati on (Length D i recti on)
Sy mbol A B K P1 D1 D0 P0 E C t W T F P2
Millimeters 4.91 +/- 0.01 4.52 +/- 0.01 1.90 +/- 0.01 8.00 +/- 0.01 1.60 +/- 0.10 1.55 +/- 0.05 4.00 +/- 0.01 1.75 +/- 0.01 9.10 +/- 0.25 0.05 +/- 0.01 12.0 +/- 0.03 0.30 +/- 0.05 5.50 +/- 0.10 2.00 +/- 0.10
Siz e
Inches 0.19 +/- 0.0004 0.18 +/- 0.0004 0.07 +/- 0.0004 0.31 +/- 0.0004 0.06 +/- 0.004 0.06 +/- 0.002 0.16 +/- 0.0004 0.07 +/- 0.0004 0.36 +/- 0.01 0.002 +/- 0.0004 0.47 +/- 0.001 0.01 +/- 0.002 0.22 +/- 0.0004 0.08 +/- 0.0004
Perforati on
C over Tape C arri er Tape D i stance
Note: Drawing not to scale
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
8
http://www.stanfordmicro.com
EDS-101442 Rev A

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